aot12n60fd/AOB12N60FD/aotf12n60fd 600v, 12a n-channel mosfet general description product summary v ds i d (at v gs =10v) 12a r ds(on) (at v gs =10v) < 0.65 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: aot12n60fdl & AOB12N60FDl & aotf12n60fdl the aot12n60fd/AOB12N60FD/aotf12n60fd have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. absolute maximum ratings t =25c unless otherwise noted 700v@150 g d s to-263 d 2 pak g d s g d s d s g top view to-220f to-220 aot12n60fd aotf12n60fd AOB12N60FD symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r cs r jc * drain current limited by maximum junction tempera ture. t c =25c thermal characteristics 300 -55 to 150 v 30 gate-source voltage t c =100c a 48 pulsed drain current c continuous drain current t c =25c i d v units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 600 aot12n60fd/AOB12N60FD maximum junction-to-case mj c/w derate above 25 o c parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c/w 5 junction and storage temperature range maximum junction-to-ambient a,d 375 single pulsed avalanche energy g 750 repetitive avalanche energy c units power dissipation b maximum case-to-sink a 0.5 -- aotf12n60fd aot12n60fd/AOB12N60FD aotf12n60fd 278 50 2.2 0.4 12 8 12* avalanche current c 5 p d c/w 8* 65 0.45 65 2.5 a w w/ o c c mj v/ns c rev.4.0:june 2013 www.aosmd.com page 1 of 6 downloaded from: http:///
aot12n60fd/AOB12N60FD/aotf12n60fd symbol min typ max units 600 700 bv dss /?tj 0.68 v/ o c 10 100 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 2.4 3 4 v r ds(on) 0.51 0.65 g fs 12 s v sd 1.3 1.6 v i s maximum body-diode continuous current 12 a i sm 48 a c iss 1310 1659 2010 pf c oss 110 166 220 pf c rss 9 15.8 23 pf r g 1.8 3.7 5.6 q g 32 41 50 nc q gs 8.7 nc q gd 19 nc t d(on) 34 ns t r 90 ns t d(off) 120 ns maximum body-diode pulsed current input capacitance gate source charge gate drain charge output capacitance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =480v, i d =12a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz v ds =0v, v gs =30v diode forward voltage zero gate voltage drain current v ds =600v, v gs =0v v ds =5v i d =250 a v ds =480v, t j =125c static drain-source on-resistance v gs =10v, i d =6a i s =12a,v gs =0v v ds =40v, i d =6a forward transconductance i dss electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss v drain-source breakdown voltage a i d =10ma, v gs =0v, t j =25c i d =10ma, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =10ma, v gs =0v turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =300v, i d =12a, r g =25 gate resistance switching parameters t d(off) 120 ns t f 82 ns t rr 135 220 ns q rr 0.5 0.8 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =12a,di/dt=100a/ s,v ds =100v turn-off fall time body diode reverse recovery time i f =12a,di/dt=100a/ s,v ds =100v turn-off delaytime r g =25 a. the value of r ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =5a, v dd =150v, r g =25 ? , starting t j =25 c rev.4.0: june 2013 www.aosmd.com page 2 of 6 downloaded from: http:///
aot12n60fd/AOB12N60FD/aotf12n60fd typical electrical and thermal characteristics 0 4 8 12 16 20 24 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 0.3 0.6 0.9 1.2 0 4 8 12 16 20 24 28 r ds(on) ( ) i d (a) figure 3: on - resistance vs. drain current and gate v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =10v i d =6a 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.4 0.8 1.2 1.6 i s (a) v sd (volts) figure 6: body-diode characteristics(note e) 25 c 125 c figure 3: on - resistance vs. drain current and gate voltage figure 4: on - resistance vs. junction temperature 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( c) figure 5:break down vs. junction temperature rev.4.0: june 2013 www.aosmd.com page 3 of 6 downloaded from: http:///
aot12n60fd/AOB12N60FD/aotf12n60fd typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =12a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 1s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s v ds (volts) figure 10: maximum forward biased safe operating area for aotf12n60fd (note f) 0 3 6 9 12 15 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 11: current de-rating (note b) v ds (volts) figure 9: maximum forward biased safe operating area for aot12n60fd/AOB12N60FD (note f) rev.4.0: june 2013 www.aosmd.com page 4 of 6 downloaded from: http:///
aot12n60fd/AOB12N60FD/aotf12n60fd typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for aot12n60fd/AOB12N60FD (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =0.45 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for aotf12n60fd (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d figure 13: normalized maximum transient thermal imp edance for aotf12n60fd (note f) -20 -15 -10 -5 0 5 10 15 -600 -300 0 300 600 900 1200 i f (a) trr (ns) figure 14: diode recovery characteristics v ds =100v i f =12a di/dt=100a/ s aot(b)(tf)12n60fd aot(b)(tf)12n60 rev.4.0: june 2013 www.aosmd.com page 5 of 6 downloaded from: http:///
aot12n60fd/AOB12N60FD/aotf12n60fd - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev.4.0: june 2013 www.aosmd.com page 6 of 6 downloaded from: http:///
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